microsemi reserves the right to cha nge, without notice, the specifications and information contained herein visit our website at www.microsemi.com or contact our facto ry direct. mrf581 mrf581g mrf581a mrf581ag description: designed for high current, low power, low noise, amplifiers up to 1.0 ghz. absolute maximum ratings (tcase = 25 c) symbol parameter mrf581 mrf581a unit v ceo collector-emitter voltage 18 15 vdc v cbo collector-base voltage 30 vdc v ebo emitter-base voltage 2.5 vdc i c collector current 200 ma thermal data p d total device dissipation @ tc = 50oc derate above 50oc 2.5 25 watts mw/ o c p d total device dissipation @ tc = 25oc derate above 25oc 1.25 10 watts mw/ o c tstg storage junction temperature range -65 to +150 o c t jmax maximum junction temperature 150 o c revision a- december 2008 macro x features ? low noise - 2.5 db @ 500 mhz ? gain at optimum noise figure = 15.5 db @ 500 mhz ? ftau - 5.0 ghz @ 10v, 75ma ? cost effective macrox package rf & microwave discrete low power transistors *g denotes rohs compliant, pb free terminal finish
microsemi reserves the right to cha nge, without notice, the specifications and information contained herein visit our website at www.microsemi.com or contact our facto ry direct. mrf581 mrf581g mrf581a mrf581ag electrical specifications (tcase = 25 c) static (off) value symbol test conditions min. typ. max. unit bvceo collector-emitter breakdown voltage mrf581 (ic = 5.0 madc, ib = 0) mrf581a 18 15 - - vdc bvcbo collector-base breakdown voltage (ic = 1.0 madc, ie = 0) 30 - - vdc bvebo emitter-base breakdown voltage (ie = 0.1 madc, ic = 0) 2.5 - - vdc icbo collector cutoff current (vcb = 15 vdc, vbe = 0 vdc) - - 0.1 ma iebo emitter cutoff current (vbe = 2.5 vdc) - - 0.1 ma (on) hfe dc current gain mrf581 (ic = 50 madc, vce = 5.0 vdc) mrf581a 50 90 - 200 250 - dynamic value symbol test conditions min. typ. max. unit cob output capacitance (vcb = 10 vdc, ie = 0, f = 1.0 mhz) - 2.0 3.0 pf ftau current-gain bandwidth product (ic = 75 madc, vce = 10 vdc, f = 1.0 ghz) - 5.0 - ghz
microsemi reserves the right to cha nge, without notice, the specifications and information contained herein visit our website at www.microsemi.com or contact our facto ry direct. mrf581 mrf581g mrf581a mrf581ag functional value symbol test conditions min. typ. max. unit nf noise figure (50ohms) (ic = 50 madc, vce = 10 vdc, f = 0.5 ghz) - 3.0 3.5 db g nf power gain @ nfmin (ic = 50 madc, vce = 10 vdc, f = 0.5 ghz) 13 15.5 db g u max maximum unilateral gain (1) ic = 50 madc, vce = 10 vdc, f = 500 mhz - 17.8 - db msg maximum stable gain ic = 50 madc, vce = 10 vdc, f = 500 mhz - 20 - db |s 21 | 2 insertion gain ic = 50 madc, vce = 10 vdc, f = 500 mhz 14 15 - db table 1. common emitter s-parameters, @ vce = 10 v, ic = 50 ma f s11 s21 s12 s22 (mhz) |s11| |s21| |s12| |s22| 100 .610 -137 23.8 116 .026 46 .522 -78 200 .659 -161 13.2 98 .033 47 .351 -106 300 .671 -171 9.0 89 .040 51 .304 -120 400 .675 -178 6.8 83 .047 55 .292 -128 500 .677 176 5.5 77 .055 58 .293 -132 600 .678 172 4.6 72 .064 61 .299 -134 700 .677 168 4.0 68 .073 62 .306 -135 800 .679 184 3.5 64 .082 63 .314 -136 900 .678 160 3.1 60 .092 64 .322 -138 1000 .682 156 2.8 56 .102 65 .311 -139
microsemi reserves the right to cha nge, without notice, the specifications and information contained herein visit our website at www.microsemi.com or contact our facto ry direct. mrf581 mrf581g mrf581a mrf581ag c1, c4, c5, c6, c8, c9 ? 1000 pf, chip capacitor c2, c3 ? 1.0?10 pf, johanson capacitor c7, c10 ? 10 f, tantalum capacitor r1 ? 1.0 k ? res. rfc ? vk?200, ferroxcube fb ? ferrite bead, ferroxcube, 56?590?65/3b tl1, tl7, tl8 ? microstrip 0.162 , x 0.600 , tl2 ? microstrip 0.162 , x 1.000 , tl3 ? microstrip 0.162 , x 0.800 , tl4 ? microstrip 0.162 , x 0.440 , tl5 ? microstrip 0.120 , x 0.440 , tl6 ? microstrip 0.120 , x 1.160 , tl9, tl10 ? microstrip 0.025 , x 4.250 , board material ? 0.0625 , thick glass teflon r = 2.55 figure 1. minimum noise figure and gain @ minimum noise figure.
microsemi reserves the right to cha nge, without notice, the specifications and information contained herein visit our website at www.microsemi.com or contact our facto ry direct. mrf581 mrf581g mrf581a mrf581ag efficienc y ( % ) gpe fre q ( mhz ) fre q ( mhz ) gu max (db) ic max (ma) package device ic max ( ma ) rf ( low power pa / general pur p ose ) selection guide ma cro x mrf559 npn 870 0.5 6.5 70 7.5 16 150 macro x mrf559 npn 870 0.5 9.5 65 12.5 16 150 so-8 mrf8372,r1,r2 npn 870 0.75 8 55 12.5 16 200 power macro mrf557 npn 870 1.5 8 55 12.5 16 400 power macro mrf557t npn 870 1.5 8 55 12.5 16 400 macro x mrf559 npn 512 0.5 10 65 7.5 16 150 macro x mrf559 npn 512 0.5 13 60 12.5 16 150 to-39 2n3866a npn400 1 10452830400 so-8 mrf3866, r1, r2 npn 400 1 10 45 28 30 400 power ma cro mrf555 npn 470 1.5 11 50 12.5 16 400 power macro mrf555t npn 470 1.5 11 50 12.5 16 400 so-8 mrf4427, r2 n pn 175 0.15 18 60 12 20 400 to-39 2n4427 n pn 175 1 10 50 12 20 400 power macro mrf553 n pn 175 1.5 11.5 60 12.5 16 500 power macro mrf553t n pn 175 1.5 11.5 50 12.5 16 500 to-39 mrf607 n pn 175 1.75 11.5 50 12.5 16 330 to-39 2n6255 n pn 175 3 7.8 50 12.5 18 1000 to-72 2n5179 n pn 200 20 6 12 50 pout ( watts ) gpe ( db ) gpe vcc bvceo t yp e packa g device t yp e nf (db) nf ic (ma) nf vce gn (db) ftau (mhz) ccb(pf) bvceo to-39 2n5109 npn 200 3 10 15 12 1200 3.5 20 400 to-39 mrf5943c npn 200 3.4 30 15 11.4 1000 30 400 so-8 mrf5943, r1, r2 npn 200 3.4 30 15 15 1300 30 400 to-72 2n5179 npn 200 4.5 1.5 6 17 900 1 12 50 to-72 2n2857 npn 300 5.5 50 6 13 1600 1 15 40 to-39 mrf517 npn 300 7.5 50 15 5.5 4600 3 25 150 to-72 mrf904 npn 450 1.5 5 6 11 4000 1 15 30 to-72 2n6304 npn 450 5 2 5 14 1400 1 15 50 macro t bfr91 npn 500 1.9 2 5 11 16.5 5000 1 12 35 macro t bfr96 npn 500 2 10 10 14.5 500 2.6 15 100 so-8 mrf5812, r1, r2 npn 500 2 50 10 15.5 17.8 5000 15 200 macro x mrf581a npn 500 2 50 10 14 15 5000 15 200 macro bfr90 npn 500 2.4 2 10 15 18 5000 1 15 30 to-72 bfy90 npn 500 2.5 2 5 20 1300 15 50 to-72 mrf914 npn 500 2.5 5 10 15 4500 12 40 macro x mrf581 npn 500 2.5 50 10 15 17.8 5000 16 200 to-39 mrf586 npn 500 3 90 15 11 14.5 4500 2.2 17 200 macro x mrf951 npn 1000 1.3 5 6 14 17 8000 0.45 10 100 macro x mrf571 npn 1000 1.5 10 6 10 8000 1 10 70 macro t bfr91 npn 1000 2.5 2 5 8 11 5000 1 12 35 macro t bfr90 npn 1000 3 2 10 10 12.5 5000 1 15 30 to-39 mrf545 pnp 14 1400 2 70 400 to-39 mrf544 n pn 13.5 1500 70 400 rf ( lna / general pur p ose ) selection guide 1 2 3 4 1 2 3 4 1 4 8 5 m ac r o x p o w e r macro t so-8 rf low power pa, lna, and general purpose discrete selector guide low cost rf plastic package options
microsemi reserves the right to cha nge, without notice, the specifications and information contained herein visit our website at www.microsemi.com or contact our facto ry direct. mrf581 mrf581g mrf581a mrf581ag pin 1. collector 2. emitter 3. base 4. emitter 1. 2. 3. 4.
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